Max. Repetitive Peak Reverse Voltage VRRM (V)Max. Repetitive Peak Forward Current IFRM (A)Max. Peak Forward Surge Current IFSM (A)Max. Forward Voltage Dropat Ta=25°C VF @ IF (V)Max. Forward Voltage Dropat Ta=25°C VF @ IF (A)Max. Reverse Current at Ta=25°C IR (A)Package Outline3.065(Ta)50-800.74 3.0 0.6DO-201AD
MBR350 |
RFQ for MBR350 |
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| Technical/Catalog Information | MBR350RL |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 740mV @ 3A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 600A @ 50V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Axial |
| Package / Case | DO-201AD, Axial |
| Packaging | Cut Tape (CT) |
| Capacitance @ Vr, F | - |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MBR350RL MBR350RL MBR350RLOSCT ND MBR350RLOSCTND MBR350RLOSCT |
| Product | Manufacturers | Pack | D/C | |||||||
| MBR350 | ON Semiconductor | 03+ | TO252 |
Features |
| • Extremely Low vF• Low Power Loss/High Efficiency• Highly Stable Oxide Passivated Junction• Low Stored Charge, Majority Carrier Conduction |
| Rating | Symbol | MBR3200 | MBR33 | MBR340 | MBR350 | MBR360 | Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
20 | 30 | 40 | 50 | 60 | V |
| Average Rectified Forward Current, TA = 65°C (RJA = 28°C/W, P.C. Board Mounting, see Note 3) |
IO | 3.0 | A | ||||
| NonRepetitive Peak Surge Current (2) (Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75°C) |
IFSM | 80 | A | ||||
| Operating and Storage Junction Temperature Range (Reverse Voltage applied) |
TJ, Tstg | -65 to 150°C | °C | ||||
| Peak Operating Junction Temperature (Forward Current applied) |
TJ(pk) | 150 | °C | ||||
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